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Union Minister Ashwini Vaishnaw Inaugurates Renesas Design Facilities in Noida and Bengaluru: India’s First 3nm Design Centers

Ashwini Vaishnaw – the Union Minister of Electronics & Information Technology, Railways, and Information & Broadcasting has inaugurated two new Renesas design facilities in both Noida and Bengaluru, India. These are also revealed to be India’s first 3nm design centers – marking the country’s milestone in 3nm chip innovation and designing.

Read more about it below.

Renesas Facilities Inaugurated in Noida and Bengaluru for 3nm Chip Designing

Renesas Electronics India Pvt. Ltd. has setup new design centers in Indian cities of Noida and Bengaluru, and Union Minister Ashwini Vaishnaw has inaugurated the facilities. These design centres which will be designing 3nm chips for the first time in India has been unveiled as part of the holistic semiconductor strategy that the country currently follows, and it is a strategic focus area in Prime Minister Narendra Modi’s Aatmanirbhar Bharat Vision.

Ashwini Vaishnaw at the inaugural event said,

“Designing at 3nm is truly next-generation. We’ve done 7nm and 5nm earlier, but this marks a new frontier.”

3nm Chip Design in India - X Post

Speaking more, to continue strengthening India’s semiconductor ecosystem, Ashwini Vaishnaw also launched a new semiconductor learning kit for engineering students, aimed at helping them enhance their practical engineering skills. Already more than 270 academic institutions have received advanced EDA – Electronic, Design, and Automation software tools under India’s Semiconductor Mission, and these institutes will be receiving the new semiconductor learning kit as well.

India from its previous nascent phase has now become an emerging global hub for the semiconductor industry, and the country is not just investing in building infrastructures, but also focuses on long-term talent development too, with a greater goal of becoming the next semiconductor leader in the global sphere.

Source X (@AshwiniVaishnaw) Press Release

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